Product Summary
The SPD02N60S5 is a Cool MOS Power Transistor.
Parametrics
Absolute maximum ratings: (1)Continuous drain current TC = 25 ℃: 1.8 A, TC = 100 ℃: 1.1 A; (2)Pulsed drain current, tp limited by Tjmax: 3.2 A; (3)Avalanche energy, single pulse ID = 1.35 A, VDD = 50 V: 50 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax ID = 1.8 A, VDD = 50 V: 0.07 mJ; (5)Avalanche current, repetitive tAR limited by Tjmax: 1.8 A; (6)Gate source voltage: ±20 V; (7)Gate source voltage AC (f >1Hz): ±30 V; (8)Power dissipation, TC = 25℃: 25 W; (9)Operating and storage temperature: -55 to +150 ℃.
Features
Features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SPD02N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 1.8A |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SPD005G |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
SPD01N50M2 |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
SPD01N60C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 0.8A |
Data Sheet |
|
|
|||||||||||||
SPD02N50C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 560V 1.8A |
Data Sheet |
|
|
|||||||||||||
SPD02N60 |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
SPD02N60C3 |
Infineon Technologies |
MOSFET COOL MOS PWR TRANS 650V 1.8A |
Data Sheet |
|
|