(China (Mainland))
Product Summary
The IRG4BC30FDPBF is a insulated gate bipolar transistor with ultrafast soft recovery diode.
Parametrics
Absolute maximum ratings: (1)VCES, collector-to-emitter voltage: 600V; (2)IC @ TC=25℃, continuous collector current: 31A; (3)IC @ TC=100℃, continuous collector current: 17A; (4)ICM, pulsed collector current: 120A; (5)ILM, clamped inductive load current: 120A; (6)IF @ TC=100℃, diode contimuous forward current: 12A; (7)IFM, diode maximum forward current: 120A; (8)VGE, gate-to-emitter voltage: ±20V; (9)PD @ TC=25℃, maximum power dissipation: 100W; (10)PD @ TC=100℃, maximum power dissipation: 42W; (11)TJ, TSTG, operating junction and storage temperature range: -55 to +150℃.
Features
Features: (1)fast: optimized for medium operating frequencies (1-5kHz in hard switching, >20kHz in resonant mode); (2)generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3; (3)IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations; (4)industry standard TO-220AB package; (5)lead-free.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRG4BC30FDPBF |
International Rectifier |
IGBT Transistors 600V Fast 1-8kHz |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
IRG4BAC50S |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
IRG4BAC50U |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
IRG4BAC50W |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
IRG4BAC50W-S |
|
DIODE IGBT 600V SUPER 220 |
Data Sheet |
Negotiable |
|
||||||||||||
|
IRG4BAC50W-SPBF |
|
IGBT N-CHAN 600V 55A SUPER220 |
Data Sheet |
|
|
||||||||||||
 |
IRG4BC10K |
|
IGBT UFAST 600V 9.0A TO-220AB |
Data Sheet |
Negotiable |
|
||||||||||||
